Several different patterning technologies are in place at the Lurie Nanofabrication Facility (LNF), to address a wide range of requirements for resolution, throughput and cost.
| Technology | LNF instruments and capabilities |
|---|---|
| Contact Lithography | 4 Contact aligners – Min. feature ~ 1.5µm – Backside alignment capability – Bond alignment For more information: https://lnf-wiki.eecs.umich.edu/wiki/Optical_lithography |
| Projection Lithography | i-line stepper – Min. feature ~ 0.5µm – 10mm square pieces up to 150mm substrate capability For more information: https://lnf-wiki.eecs.umich.edu/wiki/GCA_AS200_AutoStep |
| E-Beam Lithography | JEOL JBX6300-FS E-Beam – Min. feature 8nm – Compatible with curved and transparent substrates For more information: https://lnf-wiki.eecs.umich.edu/wiki/JEOL_JBX-6300FS_Electron_Beam_Lithography_System |
| Lithography Support | – Automated photoresist coat/develop (cassette-to-cassette and single stations) – Image reversal – Mask cleaner For more information: https://lnf-wiki.eecs.umich.edu/wiki/Optical_lithography |
| Direct Write and Mask Making | – Inkjet printing – Direct write mask maker and laser writing (1µm) For more information: https://lnf-wiki.eecs.umich.edu/wiki/Direct_writing |