Thin film deposition and annealing capabilities

The Lurie Nanofabrication Facility (LNF) offers a wide array of thin film growth, deposition, and annealing capabilities. For ion implantation, please contact University of Michigan’s Michigan Ion Beam Laboratory (MIBL).

TechnologyLNF instruments and capabilities
Diffusion/ Oxidation/ Doping/ Annealing– 9 Furnace tubes: Diffusion/ Dry and Wet oxidation/ Annealing, Sintering, CNT/graphene, n- and p-type doping, n- and p-type anneal & oxidation
– 2 Rapid Thermal Process tools
– High-Temperature (1800C) Furnace
– Bake ovens, Programmable curing oven (vacuum, inert, oxidative or reducing atmosphere)

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LPCVD/ PECVD/CVD– 14 Furnace tubes for LPCVD (low and high temperature SiO2, Si3N4, SiOxNy, low stress SiN, undoped polySi, n- and p-type in-situ doped polySi, PSG, TEOS)
– 2 PECVD systems +1 AMAT cluster tool (SiO2, Si3N4, SiOxNy, amorphous silicon with n- and p- type doped, intrinsic capability, TEOS)
– Parylene

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Physical Vapor Deposition– 8 PVD Systems for Metals, Metal Oxides, Dielectrics, Compounds and Semiconductors 

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Atomic Layer Deposition– 2 systems 
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Electroplating– Cu, Au, Ag, Pt, Ni, Fe-Ni, In
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